Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel Thickness
2008
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- Autor(en) / Beteiligte
- Titel
- Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel Thickness
- Ist Teil von
- IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.695-700
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2008
- Quelle
- IEEE
- Beschreibungen/Notizen
- Magnetic sensitivity and low-frequency noise in micro-Hall sensors based on pseudomorphic InAs quantum well channels are investigated as functions of InAs thickness. The strained InAs quantum wells with thickness between 0 and 20 Aring are added into lattice-matched doped channel In 0.53 Ga 0.47 As/In 0.47 Al 0.48 As/InP heterostructures and enhance the absolute magnetic sensitivity by increasing the electron mobility. We show that the increase of the InAs channel thickness also leads to a significant reduction of the low-frequency noise. The result is an improved magnetic field detection over a broad frequency range. A minimum magnetic field detection limit of nT is resolved by a 40-m wide doped channel micro-Hall device at frequencies around kHz.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9383eISSN: 1557-9646DOI: 10.1109/TED.2007.913000Titel-ID: cdi_pascalfrancis_primary_20037561
- Format
- –
- Schlagworte
- Applied sciences, Channels, Compound structure devices, Devices, Electron mobility, Electronics, Exact sciences and technology, Flicker noise, Hall effect devices, In _{0.53} Ga _{0.47} As, InAs, Indium arsenides, Magnetic field measurement, Magnetic fields, Noise, Quantum wells, Saturation magnetization, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, semiconductor films, semiconductor materials, Sensitivity, Sensors, Temperature measurement