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Cross-sectional transmission electron microscopy observations on the Berkovich indentation-induced deformation microstructures in GaN thin films
Ist Teil von
Journal of physics. D, Applied physics, 2007-07, Vol.40 (13), p.3985-3990
Ort / Verlag
Bristol: IOP Publishing
Erscheinungsjahr
2007
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Nanoindentation-induced mechanical deformation in GaN thin films prepared by metal-organic chemical-vapour deposition was investigated using the Berkovich diamond tip in combination with the cross-sectional transmission electron microscopy (XTEM). By using focused ion beam milling to accurately position the cross-section of the indented region, the XTEM results demonstrate that the major plastic deformation was taking place through the propagation of dislocations. The present observations are in support of attributing the pop-ins that appeared in the load-displacement curves to the massive dislocation activities occurring underneath the indenter during the loading cycle. The absence of indentation-induced new phases might have been due to the stress relaxation via the substrate and is also consistent with the fact that no discontinuity was found upon unloading.