IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2223-2230
2006
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Details
- Autor(en) / Beteiligte
- Titel
- Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment
- Ist Teil von
- IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2223-2230
- Ort / Verlag
- New York, NY: Institute of Electrical and Electronics Engineers
- Erscheinungsjahr
- 2006
- Quelle
- IEEE Explore
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9383eISSN: 1557-9646DOI: 10.1109/TED.2005.881002Titel-ID: cdi_pascalfrancis_primary_18104208
- Format
- –
- Schlagworte
- Applied sciences, Circuit properties, Design. Technologies. Operation analysis. Testing, Electric, optical and optoelectronic circuits, Electronic circuits, Electronic equipment and fabrication. Passive components, printed wiring boards, connectics, Electronics, Exact sciences and technology, Integrated circuits, Oscillators, resonators, synthetizers, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors