17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest, 2004, p.189-192
2004
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Details
- Autor(en) / Beteiligte
- Titel
- Thermal oxidation-induced strain in silicon nanobeams
- Ist Teil von
- 17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest, 2004, p.189-192
- Ort / Verlag
- Piscataway NJ: IEEE
- Erscheinungsjahr
- 2004
- Quelle
- IEEE/IET Electronic Library (IEL)
- Beschreibungen/Notizen
- Single crystal silicon beams of sub-micron thickness were fabricated from the device layer of SIMOX type silicon-on-insulator wafers. The beams were thermally oxidized at 950/spl deg/C in dry oxygen and the oxide was subsequently removed. As a result of the oxidation, there is a small but measurable accumulation of strain, which increases with the reduction of the beams' thickness. The cause of this strain is not presently known, but A model is proposed based on the injection of self-interstitial silicon atoms from the oxidation front.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 078038265X, 9780780382657DOI: 10.1109/MEMS.2004.1290554Titel-ID: cdi_pascalfrancis_primary_18024977
- Format
- –
- Schlagworte
- Applied sciences, Capacitive sensors, Compressive stress, Crystalline materials, Electronics, Etching, Exact sciences and technology, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Mechanical instruments, equipment and techniques, Micro- and nanoelectromechanical devices (mems/nems), Micromechanical devices and systems, Optical interferometry, Oxidation, Physics, Scanning electron microscopy, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Silicon on insulator technology, Strain measurement, Thickness measurement