IEEE transactions on nanotechnology, 2006-05, Vol.5 (3), p.273-277
2006
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- Autor(en) / Beteiligte
- Titel
- Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy
- Ist Teil von
- IEEE transactions on nanotechnology, 2006-05, Vol.5 (3), p.273-277
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2006
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- High-density GaN nanorods with outstanding crystal quality were grown on c-sapphire substrates by radio-frequency plasma-assisted metalorganic molecular beam epitaxy under catalyst- and template-free growth condition. Morphological and structural characterization of the GaN nanorods was employed by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy (HRTEM). These results indicate that the rod number density can reach 1/spl times/10/sup 10/ cm/sup -2/ and the nanorods are well-aligned with preferentially oriented in the c-axis direction. Meanwhile, no metallic (Ga) droplet was observed at the end of the rods, which is the intrinsic feature of vapor-liquid-solid method. Nanorods with no traces of any extended defects, as confirmed by TEM, were obtained as well. In addition, optical investigation was carried out by temperature- and power-dependent micro-photoluminescence (/spl mu/-PL). The PL peak energies are red-shifted with increasing excitation power, which is attributed to many-body effects of free carriers under high excitation intensity. The growth mechanism is discussed on the basis of the experimental results. Catalyst-free GaN nanorods presented here might have a high potential for applications in nanoscale photonic devices.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1536-125XeISSN: 1941-0085DOI: 10.1109/TNANO.2006.874055Titel-ID: cdi_pascalfrancis_primary_17821989
- Format
- –
- Schlagworte
- Applied sciences, Catalyst free, Catalysts, Circuit properties, Droplets, Electric, optical and optoelectronic circuits, Electronics, Exact sciences and technology, Excitation, Gallium nitride, Gallium nitrides, GaN nanorod, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Integrated optics. Optical fibers and wave guides, metalorganic molecular-beam epitaxy, Minerals, Molecular beam epitaxial growth, Molecular beam epitaxy, Molecular electronics, nanoelectronics, Nanorods, Nanoscale devices, Nanostructure, nanotechnology, Optical and optoelectronic circuits, Physics, Plasma density, Plasma x-ray sources, Radio frequency, Scanning electron microscopy, Scanning probe microscopes, components and techniques, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Substrates, Transmission electron microscopy, X-ray diffraction, X-rays