2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.112-516 Vol.1
First edition, 2004
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Details
- Autor(en) / Beteiligte
- Titel
- CMOS image sensor using a floating diffusion driving buried photodiode
- Ist Teil von
- 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.112-516 Vol.1
- Auflage
- First edition
- Ort / Verlag
- Piscataway, New Jersey: IEEE
- Erscheinungsjahr
- 2004
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- Two 2.5V VGA CMOS image sensors with 3.45/spl mu/m and 3.1/spl mu/m buried photodiode-pixels on a 0.25/spl mu/m 2P3M CMOS technology are described. The test chips utilize a floating diffusion driving technique to achieve 3-transistors/pixel and 2-transistors/pixel respectively, and operate at 60 frames/s with 49mW dissipation.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 0780382676, 9780780382671ISSN: 0193-6530eISSN: 2376-8606DOI: 10.1109/ISSCC.2004.1332619Titel-ID: cdi_pascalfrancis_primary_17457683
- Format
- –
- Schlagworte
- Applied sciences, CMOS image sensors, Computational Intelligence Society, Diodes, Electronics, Electrons, Exact sciences and technology, Image quality, Imaging devices, Manufacturing, Optoelectronic devices, Photodiodes, Pixel, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Voltage, Wiring