Details

Autor(en) / Beteiligte

• Nicholas, G.
• Grasby, T.J.
• Parker, E.H.C.
• Whall, T.E.
• Skotnicki, T.

Titel

Evidence of reduced self-heating in strained Si MOSFETs

Ist Teil von

• IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2005

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• Pulsed measurements are used to investigate self-heating in strained-Si MOSFETs. From analysis of the data at elevated temperatures, the thermal resistances of the devices are extracted. These are found to be considerably lower than that obtained with a widely used theory. Thermal device simulations demonstrate that the discrepancy is due to an additional conduction path through the field oxide to overlapping aluminum contacts.