Details

Autor(en) / Beteiligte

• Chattopadhyay, S.
• Chien, S.C.
• Chen, L.C.
• Chen, K.H.
• Lee, H.Y.

Titel

Thermal diffusivity in diamond, SiCxNy and BCxNy

Ist Teil von

• Diamond and related materials, 2002-03, Vol.11 (3-6), p.708-713

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2002

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Thermal diffusivity (α) of free standing diamond, amorphous silicon carbon nitride (a-SiCxNy) and boron carbon nitride (a-BCxNy) thin films on crystalline silicon, has been studied using the travelling wave technique. Thermal diffusivity in all of them was found to depend on the microstructure. For a-SiCxNy and a-BCxNy thin films two distinct regimes of high and low carbon contents were observed in which the microstructure changed considerably and that has a profound effect on the thermal diffusivity. The defective C(sp)N phase plays a key role in determining the film properties.