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In situ Measurments in a Transmission Electron Microscopy on Nanomagnetic Tunnel Junctions
Ist Teil von
Applied physics letters, 2010-06, Vol.96 (26)
Ort / Verlag
United States
Erscheinungsjahr
2010
Quelle
American Institute of Physics
Beschreibungen/Notizen
We showed that a chain of nanomagnetic tunnel junctions (MTJs) devices can be electrically addressed individually, in situ, in a transmission electron microscope, such that transport properties can be in principle, quantitatively correlated with each device's defects and microstructure. A unique energy barrier was obtained for each device measured. Additionally, in situ tunneling magnetoresistance (TMR) measurements were obtained for a subset of devices. We found that TMR values for our nano-MTJs were generally smaller than TMR in the unpatterned film.