Details

Autor(en) / Beteiligte

• Chen, Y.
• Balaji, R
• Dudley, M
• Murthy, M
• Freitas Jr., J
• Maximenko, S

Titel

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-ray Topography

Ist Teil von

• Materials science forum, 2009-01, Vol.600-603

Ort / Verlag

United States

Erscheinungsjahr

2009

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Comparative studies of defect microstructure in 4H-SiC wafers have been carried out using photoluminescence (PL) imaging and grazing-incidence Synchrotron White Beam X-ray Topography. Images of low angle grain boundaries on the PL images correlate well with SWBXT observations, and similar correlation can be established for some micropipe images although the latter is complicated by the overall level of distortion and misorientation associated with the low angle grain boundaries and the fact that many of the micropipes are located in or close to the boundaries. This validation indicates that PL imaging may provide a rapid way of imaging such defect structures in large-scale SiC wafers.