Details

Autor(en) / Beteiligte

• MCILROY, D. N
• HESKETT, D
• SWANSTON, D. M
• MCLEAN, A. B
• LUDEKE, R
• MUNEKATA, H
• PRIETSCH, M
• DINARDO, N. J

Titel

Occupied surface-state bands of Bi(1×1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy

Ist Teil von

• Physical review. B, Condensed matter, 1993-02, Vol.47 (7), p.3751-3759

Ort / Verlag

Woodbury, NY: American Physical Society

Erscheinungsjahr

1993

Quelle

PROLA - Physical Review Online Archive

Beschreibungen/Notizen

• The ordered [ital p](1[times]1) monolayer phase of Bi on InAs(110) has been studied with the technique of angle-resolved ultraviolet photoemission spectroscopy. Three Bi-induced surface-state bands ([ital S][prime],[ital S][prime][prime], and [ital S][prime][prime][prime]) have been observed. Their respective band dispersions have been mapped along the high-symmetry lines of the surface Brillouin zone. The upper two bands, [ital S][prime] and [ital S][prime][prime], appear to be degenerate across most of the surface Brillouin zone except along the [bar [Gamma]]-[ital [bar X]][prime] symmetry line. The bandwidths of the Bi-induced states of Bi/InAs(110) are significantly narrower than that of Bi/GaAs(110) or Sb/GaAs(110). The polarization of these surface-state bands has been measured and compared to predictions of current theoretical models for Sb/GaAs(110).