Physical review letters, 1990-01, Vol.64 (5), p.579-582
1990
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Titel
- Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors
- Ist Teil von
- Physical review letters, 1990-01, Vol.64 (5), p.579-582
- Ort / Verlag
- Ridge, NY: American Physical Society
- Erscheinungsjahr
- 1990
- Quelle
- American Physical Society Journals
- Beschreibungen/Notizen
- 1/f noise magnitude of unirradiated MOS transistors correlates with radiation-induced hole trapping efficiency of the oxide. This suggests that the previously unidentified defect that causes 1/f noise in MOS transistors is linked to the radiation-induced hole trap, the E prime center, or to a direct precursor in SiO sub 2 before irradiation. A simple equation relating the trapping efficiency of the oxide and the noise is derived.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0031-9007eISSN: 1079-7114DOI: 10.1103/PhysRevLett.64.579Titel-ID: cdi_osti_scitechconnect_6963462
- Format
- –
- Schlagworte
- 360104 - Metals & Alloys- Physical Properties, 360603 - Materials- Properties, ANNEALING, CHALCOGENIDES, COLOR CENTERS, Condensed matter: electronic structure, electrical, magnetic, and optical properties, CRYSTAL DEFECTS, CRYSTAL STRUCTURE, DATA, DIMENSIONS, E CENTERS, EFFICIENCY, Electronic transport in condensed matter, ELEMENTS, ENERGY, EQUATIONS, Exact sciences and technology, EXPERIMENTAL DATA, FLUCTUATIONS, HEAT TREATMENTS, HOLES, INFORMATION, JUNCTIONS, MATERIALS SCIENCE, METALS, MINERALS, NONMETALS, NUMERICAL DATA, OXIDE MINERALS, OXIDES, OXYGEN, OXYGEN COMPOUNDS, PHYSICAL RADIATION EFFECTS, Physics, POINT DEFECTS, PRECURSOR, RADIATION EFFECTS, SEMICONDUCTOR DEVICES, SEMICONDUCTOR JUNCTIONS, SILICA, SILICON COMPOUNDS, SILICON OXIDES, THICKNESS, THRESHOLD ENERGY, TRANSISTORS, TRAPPING, VACANCIES, VARIATIONS, VERY HIGH TEMPERATURE