Details

Autor(en) / Beteiligte

• McManus, A.
• Boden, A.
• Chen, T.Y.
• Cooper, M.
• Cox, B.
• Fortney, L.
• Golovatyuk, V.
• Hanlet, P.
• Kowald, W.
• Mazur, P.
• Nelson, K.
• Ramachandran, S.
• Recagni, M.
• Segal, J.
• Selove, W.
• Smith, R.
• Sun, J.
• Trischuk, J.
• VanBerg, R.
• Yao, N.
• Zou, B.

Titel

Performance of a silicon microstrip detector in a very high rate environment

Ist Teil von

• IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1992-10, Vol.39 (5), p.1249-1253

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

1992

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• A silicon microstrip detector (SSD) system for use in very-high-rate experiments was designed for experiment E77 at Fermi National Accelerator Laboratory. The detector electronics were designed using application-specific IC (ASIC) chip sets where commercial circuits where not suitable. The electronics for the SSD were designed to operate with interaction rates up to 10/sup 7/ interactions/sec. In addition to speed, the detector for the current run is very compact with 10000 channels of active detector in a volume of 5 cm*5 cm*10 cm. The strip pitch ranges from 25 mu m in the center of the detector near the target to 100 mu m pitch at the most downstream, outer edge of the detector. The readout is a latch design with efficiencies of approximately 95% even in the presence of radiation damage and high leakage currents. The detector and associated amplifier electronics have been operated at 20 degrees C and were designed to operate at 8 degrees C.< >