IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994, Vol.41 (6), p.1854-1863
1994
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Details
- Autor(en) / Beteiligte
- Titel
- Radiation effects in oxynitrides grown in N(2)O
- Ist Teil von
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994, Vol.41 (6), p.1854-1863
- Ort / Verlag
- United States
- Erscheinungsjahr
- 1994
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- Oxynitrides have been grown by oxidation in N(2)O in a standard thermal oxidation furnace. Two N(2)O processes have been studied: oxidation in N(2)O only, and two-step oxidation with initial oxidation in O(2) followed by oxidation/nitridation in N(2)O. Results are presented for radiation damage at 80 and 295 K, hole trapping, interface trap creation, electron spin resonance, and hole de-trapping using thermally-stimulated current analysis. N(2)O oxynitrides do not appear to have the well-known drawbacks of NH(3)-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N(2)O oxynitrides, with the degree of improvement depending on the fabrication process
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9499eISSN: 1558-1578DOI: 10.1109/23.340517Titel-ID: cdi_osti_scitechconnect_6457158
- Format
- –
- Schlagworte
- 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems, CHALCOGENIDES, CRYSTAL DEFECTS, CRYSTAL STRUCTURE, INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY, MATERIALS SCIENCE, NITROGEN COMPOUNDS, NITROGEN DIOXIDE, NITROGEN OXIDES, OXIDES, OXYGEN COMPOUNDS, PHYSICAL RADIATION EFFECTS, RADIATION EFFECTS 360605 -- Materials-- Radiation Effects, SEMICONDUCTOR DEVICES