Details

Autor(en) / Beteiligte

• Komarov, F. F.
• Makhavikou, M. A.
• Vlasukova, L. A.
• Milchanin, O. V.
• Skuratov, V. A.
• Vuuren, A. Janse
• Neetling, J. N.
• Parkhomenko, I. N.
• Żuk, J.

Titel

Structural Transformation of “Silica+Zn” Nanocomposite after Annealing in Oxidizing Atmosphere

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (16), p.2111-2113

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2018

Quelle

SpringerLink

Beschreibungen/Notizen

• It has been found that “hot” high-fluence Zn + implantation leads to the formation of the extended layer with zinc-based nanoclusters of size up to 10 nm in SiO 2 film. The precipitate’s crystalline nature is confirmed by HRTEM studies. Post-implantation annealing at 700°C for 60 min leads to Zn atoms redistribution in implanted region, formation of the larger crystallites (up to 25 nm) and the small Zn nanoparticles surrounded by the oxide shells (core (Zn)/shell(ZnO) structure) as well as the voids formation at the interface “Zn nanocluster/SiO 2 matrix”. The number of the core (Zn)/shell (ZnO) structures and the voids increases after annealing at 700°C for 120 min.