Details

Autor(en) / Beteiligte

• Grebenshchikova, E. A.
• Sidorov, V. G.
• Shutaev, V. A.
• Yakovlev, Yu. P.

Titel

Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2019-02, Vol.53 (2), p.234-236

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2019

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The variation rate of the short-circuit photocurrent of Pd/ n -InP Schottky diodes is studied as a function of the presence of hydrogen in a gas mixture with H 2 concentrations of 1–100 vol %. It is shown that upon the simultaneous exposure of the Schottky diode to a hydrogen-containing gas mixture and to light (λ = 0.9 μm), the hydrogen concentration in the gas mixture and the Pd/ n -InP diode photocurrent variation rate are related exponentially. The Schottky-diode response rate to the presence of hydrogen in the gas mixture increases with the illumination intensity.