Details

Autor(en) / Beteiligte

• Prudaev, A. I.
• Verkholetov, M. G.

Titel

Nonlinearity of Volt–Ampere Characteristics of Homogeneous Compensated Detector GaAs Structures

Ist Teil von

• Technical physics letters, 2019-06, Vol.45 (6), p.566-569

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2019

Quelle

SpringerLink

Beschreibungen/Notizen

• The results of a study of carrier transfer and recharging of deep levels in semiconductor structures for ionizing radiation detectors are presented. Resistive-type arsenide–gallium structures with Schottky barriers and uniform distribution of deep chromium acceptors and donor EL2 centers have been studied. Solving the continuity and Poisson equations using the commercial design package, the effect of the volume depletion of detector structures by electrons with an increase in the applied voltage has been observed. It is established that the nonlinearity of the volt-ampere characteristics of structures occurs due to a change in the type of conductivity upon transition from an equilibrium to a nonequilibrium state. In this case, structures with initial (equilibrium) hole-type conductivity have close to linear volt–ampere characteristics.