Details

Autor(en) / Beteiligte

• Surovegina, E. A.
• Demidov, E. V.
• Drozdov, M. N.
• Murel, A. V.
• Khrykin, O. I.
• Shashkin, V. I.
• Lobaev, M. A.
• Gorbachev, A. M.
• Viharev, A. L.
• Bogdanov, S. A.
• Isaev, V. A.
• Muchnikov, A. B.
• Chernov, V. V.
• Radishchev, D. B.
• Batler, D. E.

Titel

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1569-1573

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2016

Link zum Volltext

Quelle

SpringerLink Journals

Beschreibungen/Notizen

• The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 10 17 to ~10 20 at cm –3 and of δ doping to the surface concentration (0.3–5) × 10 13 at cm –3 are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.