Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1673-1677
2016
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Details
- Autor(en) / Beteiligte
- Titel
- Polarization of the induced THz emission of donors in silicon
- Ist Teil von
- Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1673-1677
- Ort / Verlag
- Moscow: Pleiades Publishing
- Erscheinungsjahr
- 2016
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- The polarization of the terahertz (4.9–6.4 THz) stimulated emission of Group-V (Sb, P, As, Bi) donors in single-crystal silicon under pumping (photoionization) by a CO 2 laser (photon energy 117 meV), depending on the uniaxial compressive deformation of the crystal along the [100] axis, is experimentally investigated. The influence of the field direction of the pump wave on its efficiency is discussed.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1063-7826eISSN: 1090-6479DOI: 10.1134/S1063782616120101Titel-ID: cdi_osti_scitechconnect_22645273
- Format
- –
- Schlagworte
- 2016, ANTIMONY, ARSENIC, BISMUTH, Carbon dioxide, CARBON DIOXIDE LASERS, CRYSTAL STRUCTURE, DEFORMATION, Electromagnetic radiation, Magnetic Materials, Magnetism, March 14–18, MATERIALS SCIENCE, MONOCRYSTALS, Nizhny Novgorod, PHOSPHORUS, PHOTOIONIZATION, PHOTONS, Physics, Physics and Astronomy, POLARIZATION, PUMPING, SILICON, Single crystals, STIMULATED EMISSION, XX International Symposium “Nanophysics and Nanoelectronics”