Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.33-38
- Gaisler, V. A.
- Gaisler, A. V.
- Jaroshevich, A. S.
- Derebezov, I. A.
- Kachanova, M. M.
- Zhivodkov, Yu. A.
- Gavrilova, T. A.
- Medvedev, A. S.
- Nenasheva, L. A.
- Grachev, K. V.
- Sandyrev, V. K.
- Kozhuhov, A. S.
- Shayahmetov, V. M.
- Kalagin, A. K.
- Bakarov, A. K.
- Dmitriev, D. V.
- Toropov, A. I.
- Shcheglov, D. V.
- Latyshev, A. V.
- Aseev, A. L.
2015
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Gaisler, V. A.
- Gaisler, A. V.
- Jaroshevich, A. S.
- Derebezov, I. A.
- Kachanova, M. M.
- Zhivodkov, Yu. A.
- Gavrilova, T. A.
- Medvedev, A. S.
- Nenasheva, L. A.
- Grachev, K. V.
- Sandyrev, V. K.
- Kozhuhov, A. S.
- Shayahmetov, V. M.
- Kalagin, A. K.
- Bakarov, A. K.
- Dmitriev, D. V.
- Toropov, A. I.
- Shcheglov, D. V.
- Latyshev, A. V.
- Aseev, A. L.
- Titel
- Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots
- Ist Teil von
- Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.33-38
- Ort / Verlag
- Moscow: Pleiades Publishing
- Erscheinungsjahr
- 2015
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- A semiconductor Bragg microcavity structure for single photon emitters is designed and implemented. The design provides the efficient current pumping of selectively positioned InAs quantum dots within a micrometer-size aperture, high external quantum yield, and low divergence of the emitted radiation.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1063-7826eISSN: 1090-6479DOI: 10.1134/S1063782615010091Titel-ID: cdi_osti_scitechconnect_22470139
- Format
- –
- Schlagworte
- 2014, BRAGG REFLECTION, EMISSION, INDIUM ARSENIDES, Magnetic Materials, Magnetism, March 10–14, MATERIALS SCIENCE, NANOSCIENCE AND NANOTECHNOLOGY, Nanotechnology, Nizhni Novgorod, PHOTONS, Physics, Physics and Astronomy, QUANTUM DOTS, SEMICONDUCTOR MATERIALS, XVIII Symposium “Nanophysics and Nanoelectronics”