Details

Autor(en) / Beteiligte

• Krishtopenko, S. S.
• Maremyanin, K. V.
• Kalinin, K. P.
• Spirin, K. E.
• Gavrilenko, V. I.
• Baidus, N. V.
• Zvonkov, B. N.

Titel

Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.191-198

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2015

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures with a two-dimensional electron gas is studied. Analysis of the temperature dependence of the resistance in the minima of the Shubnikov-de Haas oscillations in perpendicular magnetic fields up to 12 T in the vicinity of the odd filling factors of the Landau levels yields the values of the effective electron Lande factor g * from −8.6 to −10.1. The experimental values are compared with the results of theoretical calculations of the g factor of quasiparticles. The calculations are performed using an eight-band k · p Hamiltonian and take into account exchange interaction in the two-dimensional electron gas. It is shown that, under the conditions of a large overlap between the spin-split Landau levels, the maximum value of the quasiparticle g factor can be attained in the vicinity of even filling factors. This is caused by the nonparabolicity of the electron dispersion relation.