Details

Autor(en) / Beteiligte

• Jing, Qiang
• Wu, Guoguang
• Zhang, Yuantao
• Gao, Fubin
• Cai, Xupu
• Zhao, Yang
• Li, Wancheng
• Du, Guotong

Titel

Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

Ist Teil von

• Applied physics letters, 2014-08, Vol.105 (6)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.