Details

Autor(en) / Beteiligte

• Othmen, Riadh
• Rezgui, Kamel
• Cavanna, Antonella
• Arezki, Hakim
• Gunes, Fethullah
• Ajlani, Hosni
• Madouri, Ali
• Oueslati, Meherzi

Titel

Improvement of the quality of graphene-capped InAs/GaAs quantum dots

Ist Teil von

• Journal of applied physics, 2014-06, Vol.115 (21)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• In this paper, we study the transfer of graphene onto InAs/GaAs quantum dots (QDs). The graphene is first grown on Cu foils by chemical vapor deposition and then polymer Polymethyl Methacrylate (PMMA) is deposited on the top of graphene/Cu. High quality graphene sheet has been obtained by lowering the dissolving rate of PMMA using vapor processing. Uncapped as well as capped graphene InAs/GaAs QDs have been studied using optical microscopy, scanning electron microscopy, and Raman spectroscopy. We gather from this that the average shifts Δω of QDs Raman peaks are reduced compared to those previously observed in graphene and GaAs capped QDs. The encapsulation by graphene makes the indium atomic concentration intact in the QDs by the reduction of the strain effect of graphene on QDs and the migration of In atoms towards the surface. This gives us a new hetero-structure graphene–InAs/GaAs QDs wherein the graphene plays a key role as a cap layer.