Details

Autor(en) / Beteiligte

• Roland, I.
• Zeng, Y.
• Han, Z.
• Checoury, X.
• Blin, C.
• El Kurdi, M.
• Ghrib, A.
• Sauvage, S.
• Gayral, B.
• Brimont, C.
• Guillet, T.
• Semond, F.
• Boucaud, P.

Titel

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Ist Teil von

• Applied physics letters, 2014-07, Vol.105 (1)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ∼7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.