Details

Autor(en) / Beteiligte

• Riuttanen, L.
• Kivisaari, P.
• Nykänen, H.
• Svensk, O.
• Suihkonen, S.
• Oksanen, J.
• Tulkki, J.
• Sopanen, M.

Titel

Diffusion injected multi-quantum well light-emitting diode structure

Ist Teil von

• Applied physics letters, 2014-02, Vol.104 (8)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• The attention towards light-emitting diode (LED) structures based on nanowires, surface plasmon coupled LEDs, and large-area high-power LEDs has been increasing for their potential in increasing the optical output power and efficiency of LEDs. In this work we demonstrate an alternative way to inject charge carriers into the active region of an LED, which is based on completely different current transport mechanism compared to conventional current injection approaches. The demonstrated structure is expected to help overcoming some of the challenges related to current injection with conventional structures. A functioning III-nitride diffusion injected light-emitting diode structure, in which the light-emitting active region is located outside the pn-junction, is realized and characterized. In this device design, the charge carriers are injected into the active region by bipolar diffusion, which could also be utilized to excite otherwise challenging to realize light-emitting structures.