Details

Autor(en) / Beteiligte

• Groll, Nickolas R.
• Klug, Jeffrey A.
• Claus, Helmut
• Pellin, Michael J.
• Proslier, Thomas
• Cao, Chaoyue
• Becker, Nicholas G.
• Zasadzinski, John F.
• Department of Physics, Illinois Institute of Technology, Chicago, Illinois 60616
• Altin, Serdar

Titel

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

Ist Teil von

• Applied physics letters, 2014-03, Vol.104 (9)

Ort / Verlag

United States

Erscheinungsjahr

2014

Quelle

AIP Journals

Beschreibungen/Notizen

• A tunneling spectroscopy study is presented of superconducting MoN and Nb{sub 0.8}Ti{sub 0.2}N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2 meV and 2.4 meV, respectively, with a corresponding critical temperature of 11.5 K and 13.4 K, among the highest reported T{sub c} values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below ∼10%) were obtained using an artificial tunnel barrier of Al{sub 2}O{sub 3} on the film's surface grown ex situ by ALD. We find a large critical current density on the order of 4 × 10{sup 6} A/cm{sup 2} at T = 0.8T{sub c} for a 60 nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest that the ALD technique offers significant promise for thin film superconducting device applications.