Details

Autor(en) / Beteiligte

• Szmulowicz, F.

Titel

Comment on “A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb superlattices” [J. Appl. Phys. 114 , 053712 (2013)]

Ist Teil von

• Journal of applied physics, 2014-04, Vol.115 (14)

Ort / Verlag

United States

Erscheinungsjahr

2014

Quelle

AIP Journals (American Institute of Physics)

Beschreibungen/Notizen

• The purpose of this comment is to point out that the paper by Safa, Asgari, and Faraone [J. Appl. Phys. 114, 053712 (2013)] (SAF) on electronic transport in superlattices contains a number of errors in physics and execution. By dealing with a finite number of periods and forcing the wave function to be zero at the upper and lower boundaries of the superlattice stack, SAF have turned the system into a quantum well for which the momentum along the growth axis is not a good quantum number, so that the bands in the growth direction are flat and the corresponding carrier velocities and vertical mobilities are zero. A number of other errors allow the authors to get nonzero results and to reach conclusions that qualitatively mirror those of Szmulowicz, Haugan, Elhamri, and Brown [Phys. Rev. B 84, 155307 (2011)].