Details

Autor(en) / Beteiligte

• Thomas, Luc
• Jan, Guenole
• Zhu, Jian
• Liu, Huanlong
• Lee, Yuan-Jen
• Le, Son
• Tong, Ru-Ying
• Pi, Keyu
• Wang, Yu-Jen
• Shen, Dongna
• He, Renren
• Haq, Jesmin
• Teng, Jeffrey
• Lam, Vinh
• Huang, Kenlin
• Zhong, Tom
• Torng, Terry
• Wang, Po-Kang

Titel

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

Ist Teil von

• Journal of applied physics, 2014-05, Vol.115 (17)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Link zum Volltext

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 kBT/μA, energy barriers higher than 100 kBT at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.