Details

Autor(en) / Beteiligte

• van den Brink, A.
• Cosemans, S.
• Cornelissen, S.
• Manfrini, M.
• Vaysset, A.
• Van Roy, W.
• Min, T.
• Swagten, H. J. M.
• Koopmans, B.

Titel

Spin-Hall-assisted magnetic random access memory

Ist Teil von

• Applied physics letters, 2014-01, Vol.104 (1)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1 ns write time.