Details

Autor(en) / Beteiligte

• Amorim, L. M.
• Wahl, U.
• Pereira, L. M. C.
• Decoster, S.
• Silva, D. J.
• da Silva, M. R.
• Gottberg, A.
• Correia, J. G.
• Temst, K.
• Vantomme, A.

Titel

Precise lattice location of substitutional and interstitial Mg in AlN

Ist Teil von

• Applied physics letters, 2013-12, Vol.103 (26)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The lattice site location of radioactive 27Mg implanted in AlN was determined by means of emission channeling. The majority of the 27Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. The activation energy for interstitial Mg diffusion is estimated to be between 1.1 eV and 1.7 eV. Substitutional Mg is shown to occupy ideal Al sites within a 0.1 Å experimental uncertainty. We discuss the absence of significant displacements from ideal Al sites, in the context of the current debate, on Mg doped nitride semiconductors.