Details

Autor(en) / Beteiligte

• Guimbretiere, G.
• Canizares, A.
• Duval, F.
• Raimboux, N.
• Ammar, M. R.
• Simon, P.
• Desgranges, L.
• Carlot, G.
• Caraballo, R.
• Jegou, C.

Titel

Determination of in-depth damaged profile by Raman line scan in a pre-cut He{sup 2+} irradiated UO{sub 2}

Ist Teil von

• Applied physics letters, 2012-06, Vol.100 (25)

Ort / Verlag

United States

Erscheinungsjahr

2012

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Raman measurements were carried out to probe the spectroscopic signatures of the ion beam irradiation-induced damage and their in-depth profiles on a Uranium dioxide sample previously cut and polished prior to performing a 25 MeV He{sup 2+} cyclotron beam irradiation. Raman spectra clearly show the creation of three defects bands (U{sub 1} Almost-Equal-To 530, U{sub 2} Almost-Equal-To 575, and U{sub 3} Almost-Equal-To 635 cm{sup -1}) resulting from the ion irradiation and also some changes in the T{sub 2g} peak of UO{sub 2}. Their in-depth distribution inside the sample exhibits a clear increase of the damage from the surface up to the position of the implanted He.