Details

Autor(en) / Beteiligte

• Feklistov, K. V.
• Fedina, L. I.
• Cherkov, A. G.

Titel

Precipitation of boron in silicon on high-dose implantation

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.285-288

Ort / Verlag

Dordrecht: SP MAIK Nauka/Interperiodica

Erscheinungsjahr

2010

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Precipitation of boron implanted in silicon with a dose of 1 × 10 16 cm −2 is studied in relation to the concentration of substitutional boron introduced before implantation and before subsequent annealing at 900°C. It is shown that = 2.5 × 10 20 cm −3 is the critical concentration, at which the formation of precipitates is independent of the concentration of point defects introduced by implantation (far from or close to the mean projected range R p ) and constitutes the prevailing channel of deactivation of boron. At lower concentrations close to the equilibrium concentration, precipitation is observed only far from R p , in the regions of reduced concentrations of point defects. At the same time, in the region of R p with a high concentration of point defects, most boron atoms are drawn into clustering with intrinsic interstitial atoms with the formation of dislocation loops and, thus, become electrically inactive as well.