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Ultrathin
[
Co
/
Pt
]
n
and
[
Co
/
Pd
]
n
superlattice films consisting of 0.14-0.20-nm-thick Co and Pt(Pd) layers were deposited by sputtering. A large perpendicular magnetic anisotropy [
(
3
-
9
)
×
10
6
ergs
/
cm
3
] and an ideal square out-of-plane hysteresis loop were attained even for ultrathin superlattice films with a total thickness of 1.2-2.4 nm. The films were stable against annealing up to
370
°
C
. MgO-based perpendicular magnetic tunnel junctions with this superlattice layer as the free layer showed a relatively high magnetoresistance ratio (62%) and an ultralow resistance-area product
(
3.9
Ω
μ
m
2
)
at room temperature. The use of these films will enable the development of gigabit-scale nonvolatile memory.