Details

Autor(en) / Beteiligte

• Szlachetko, J.
• Banaś, D.
• Kubala-Kukuś, A.
• Pajek, M.
• Cao, W.
• Dousse, J.-Cl
• Hoszowska, J.
• Kayser, Y.
• Szlachetko, M.
• Kavčič, M.
• Salome, M.
• Susini, J.

Titel

Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology

Ist Teil von

• Journal of applied physics, 2009-04, Vol.105 (8), p.086101-086101-3

Ort / Verlag

United States: American Institute of Physics

Erscheinungsjahr

2009

Quelle

American Institute of Physics

Beschreibungen/Notizen

• We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10 12   atoms / cm 2 . The latter can be presumably further improved down to 10 7   atoms / cm 2 by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed.