Details

Autor(en) / Beteiligte

• Asmussen, J.
• Grotjohn, T. A.
• Schuelke, T.
• Becker, M. F.
• Yaran, M. K.
• King, D. J.
• Wicklein, S.
• Reinhard, D. K.

Titel

Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis

Ist Teil von

• Applied physics letters, 2008-07, Vol.93 (3), p.031502-031502-3

Ort / Verlag

United States: American Institute of Physics

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a 915 MHz reactor. Diamond synthesis was performed using input chemistries of 6-8% of C H 4 ∕ H 2 , microwave input powers of 10 - 11.5 kW , substrate temperatures of 1100 - 1200 ° C , and pressures of 110 - 135 Torr . The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of 14 - 21 μ m ∕ h . Multiple deposition runs totaling 145 h of deposition time added 1.8 - 2.5 mm of diamond material to each of the 70 seed crystals.