Details

Autor(en) / Beteiligte

• Maeda, Yoshihito
• Jonishi, Takafumi
• Narumi, Kazumasa
• Ando, Yu-ichiro
• Ueda, Koji
• Kumano, Mamoru
• Sadoh, Taizoh
• Miyao, Masanobu
• Advanced Science Research Center, Japan Atomic Energy Agency, Takasaki 370-1292
• Department of Electronics, Kyushu University, Motooka, Fukuoka 819-0395

Titel

Axial orientation of molecular-beam-epitaxy-grown Fe{sub 3}Si/Ge hybrid structures and its degradation

Ist Teil von

• Applied physics letters, 2007-10, Vol.91 (17)

Ort / Verlag

United States

Erscheinungsjahr

2007

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The axial orientation of molecular-beam-epitaxy (MBE)-grown Fe{sub 3}Si(111)/Ge(111) hybrid structures was investigated by Rutherford backscattering spectroscopy. We confirmed that during MBE above 300 deg. C, the interdiffusion of Fe and Ge atoms results in a composition change and the epitaxial growth of FeGe in Fe{sub 3}Si. Low-temperature (<200 deg. C) MBE can realize fully ordered DO{sub 3}-Fe{sub 3}Si with highly axial orientation [minimum yield ({chi}{sub min})=2.2%]. Postannealing above 400 deg. C results in a composition change and the degradation of axial orientation in the off-stoichiometric Fe{sub 3}Si. The significance of stoichiometry with regard to thermal stability and the interfacial quality of Fe{sub 3}Si(111)/Ge(111) hybrid structures was also discussed.