Details

Autor(en) / Beteiligte

• Zeng, Z. Q.
• Liu, Y. Z.
• Yuan, H. T.
• Mei, Z. X.
• Du, X. L.
• Jia, J. F.
• Xue, Q. K.
• Zhang, Z.
• Department of Physics, Tsinghua University, Beijing 100084
• Beijing University of Technology, Beijing 100022

Titel

Surface modification of MgAl{sub 2}O{sub 4} (111) for growth of high-quality ZnO epitaxial films

Ist Teil von

• Applied physics letters, 2007-02, Vol.90 (8)

Ort / Verlag

United States

Erscheinungsjahr

2007

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A magnesium wetting layer was used to modify the surface structure of MgAl{sub 2}O{sub 4} (111) substrate to achieve growth of high-quality ZnO film by radio frequency plasma-assisted molecular beam epitaxy. It is found that this magnesium layer plays a crucial role in 30 deg. rotation domain elimination, defect density reduction, and polarity control of ZnO film, as demonstrated by in situ reflection high-energy electron diffraction and ex situ transmission electron microscopy. Atomic force microscopy observation shows smooth ZnO surfaces with clearly resolved atomic steps of the films.