Details

Autor(en) / Beteiligte

• Jambois, O.
• Garrido, B.
• Pellegrino, P.
• Carreras, Josep
• Pérez-Rodríguez, A.
• Montserrat, J.
• Bonafos, C.
• BenAssayag, G.
• Schamm, S.

Titel

White electroluminescence from C- and Si-rich thin silicon oxides

Ist Teil von

• Applied physics letters, 2006-12, Vol.89 (25), p.253124-253124-3

Ort / Verlag

United States: American Institute of Physics

Erscheinungsjahr

2006

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• White electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40 nm thick Si O 2 , followed by annealing at 1100 ° C . Structural and optical studies allow assigning the electroluminescence to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10 − 4 % . Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25 V , corresponding to the onset of electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers.