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A ZnO
p
-
n
junction light-emitting diode (LED) was fabricated on
a
-plane
Al
2
O
3
substrate by plasma-assisted molecular-beam epitaxy. NO plasma activated by a radio frequency atomic source was used to grow the
p
-type ZnO layer of the LED. The current-voltage measurements at low temperatures showed a typical diode characteristic with a threshold voltage of about
4.0
V
under forward bias. With increasing temperature, the rectification characteristic was degraded gradually, and faded away at room temperature. Electroluminescence band of the ZnO
p
-
n
junction LED was located at the blue-violet region and was weakened significantly with increase of temperature. This thermal quenching of the electroluminescence was attributed to the degradation of the diode characteristic with temperature.