Details

Autor(en) / Beteiligte

• Jiao, S. J.
• Zhang, Z. Z.
• Lu, Y. M.
• Shen, D. Z.
• Yao, B.
• Zhang, J. Y.
• Li, B. H.
• Zhao, D. X.
• Fan, X. W.
• Tang, Z. K.

Titel

ZnO p - n junction light-emitting diodes fabricated on sapphire substrates

Ist Teil von

• Applied physics letters, 2006-01, Vol.88 (3), p.031911-031911-3

Ort / Verlag

United States: American Institute of Physics

Erscheinungsjahr

2006

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• A ZnO p - n junction light-emitting diode (LED) was fabricated on a -plane Al 2 O 3 substrate by plasma-assisted molecular-beam epitaxy. NO plasma activated by a radio frequency atomic source was used to grow the p -type ZnO layer of the LED. The current-voltage measurements at low temperatures showed a typical diode characteristic with a threshold voltage of about 4.0 V under forward bias. With increasing temperature, the rectification characteristic was degraded gradually, and faded away at room temperature. Electroluminescence band of the ZnO p - n junction LED was located at the blue-violet region and was weakened significantly with increase of temperature. This thermal quenching of the electroluminescence was attributed to the degradation of the diode characteristic with temperature.