Details

Autor(en) / Beteiligte

• Adomavičius, R.
• Molis, G.
• Krotkus, A.
• Sirutkaitis, V.

Titel

Spectral dependencies of terahertz emission from InAs and InSb

Ist Teil von

• Applied physics letters, 2005-12, Vol.87 (26), p.261101-261101-3

Ort / Verlag

United States: American Institute of Physics

Erscheinungsjahr

2005

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Spectral dependences of the THz radiation from the laser-illuminated surfaces of InAs and InSb have been investigated experimentally at high optical fluences for the laser wavelengths ranging from 0.6 to 2 μ m . Efficient THz generation was discovered in the excitation range around 1.6 μ m . The influence of the intervalley scattering was clearly evidenced. The energy position of the subsidiary conduction band valleys was evaluated from this study to be equal 1.08 and 0.53 eV for InAs and InSb, respectively. It has been concluded that THz emission at high excitation fluencies is dominated by the shift current effect.