Details

Autor(en) / Beteiligte

• Hickey, M.C.
• Damsgaard, C.D.
• Farrer, I.
• Holmes, S.N.
• Husmann, A.
• Hansen, J.B.
• Jacobsen, C.S.
• Ritchie, D.A.
• Lee, R.F.
• Jones, G.A.C.
• Pepper, M.
• Toshiba Research Europe Limited, Cambridge Research Laboratory, 260 Cambridge Science Park, Cambridge, CB4 0WE
• Department of Physics, Technical University of Denmark, DK-2800, Lyngby
• Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE

Titel

Spin injection between epitaxial Co{sub 2.4}Mn{sub 1.6}Ga and an InGaAs quantum well

Ist Teil von

• Applied physics letters, 2005-06, Vol.86 (25)

Ort / Verlag

United States

Erscheinungsjahr

2005

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Electrical spin injection in a narrow [100] In{sub 0.2}Ga{sub 0.8}As quantum well in a GaAs p-i-n optical device is reported. The quantum well is located 300 nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe and the Heusler alloy Co{sub 2.4}Mn{sub 1.6}Ga grown by molecular-beam epitaxy. At 5 K, the injected electron spin polarizations for Fe and Co{sub 2.4}Mn{sub 1.6}Ga injectors are 31% and 13%, respectively. Optical detection is carried out in the oblique Hanle geometry. A dynamic nuclear polarization effect below 10 K enhances the magnetic field seen by the injected spins in both devices. The Co{sub 2.4}Mn{sub 1.6}Ga thin films are found to have a transport spin polarization of {approx}50% by point contact Andreev reflection conductivity measurements.