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Details

Autor(en) / Beteiligte
Titel
Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions
Ist Teil von
  • Physical review. B, Condensed matter, 2000-05, Vol.61 (20), p.R13349-R13352
Ort / Verlag
United States
Erscheinungsjahr
2000
Quelle
PROLA
Beschreibungen/Notizen
  • To evaluate the role of nonphonon energy relaxation mechanisms in quantum dots and in particular the role of electron-hole (e-h) interactions, we have studied femtosecond carrier dynamics in CdSe colloidal nanoparticles in which the e-h separation (coupling) is controlled using different types of surface ligands. In dots capped with hole accepting molecules, the e-h coupling is strongly reduced after the hole is transferred to a capping group. By re-exciting an electron within the conduction band at different stages of hole transfer and monitoring its relaxation back into the ground state, we observe a more than tenfold increase in the electron relaxation time (from 250 fs to 3 ps) after the completion of the hole transfer to the capping molecule. This strongly indicates that electron relaxation in quantum dots is dominated not by phonon emission but by the e-h energy transfer. (c) 2000 The American Physical Society.
Sprache
Englisch
Identifikatoren
ISSN: 0163-1829, 1098-0121
eISSN: 1095-3795, 1550-235X
DOI: 10.1103/PhysRevB.61.R13349
Titel-ID: cdi_osti_scitechconnect_20216568

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