Details

Autor(en) / Beteiligte

• THOMPSON, M. P
• AUNER, G. W
• DREWS, A. R

Titel

Epitaxial growth of zinc-blende AlN on Si(100) substrates by plasma source molecular beam epitaxy

Ist Teil von

• Journal of electronic materials, 1999, Vol.28 (10), p.L17-L19

Ort / Verlag

New York, NY: Institute of Electrical and Electronics Engineers

Erscheinungsjahr

1999

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Epitaxial zinc-blende AlN films were deposited on Si(100) substrates by plasma source molecular beam epitaxy (PSMBE). The lattice parameter of the zinc-blende AlN was determined to be 4.373 angstroms. The epitaxial relationship between film and substrate was (100)AlN||(100)Si and [011]AlN||[011]Si. The zinc-blende AlN films were formed using a hollow cathode source with a pulse dc power supply in the PSMBE system. The high energy and large density of the Al+ and N+ species emerging from the hollow cathode and the presence of a substrate surface with cubic symmetry are probably the main factors for the formation of the metastable zinc-blende phase of AlN. 15 refs.