Details

Autor(en) / Beteiligte

• Kang, Seunghun
• Woo-Sung, Jang
• Morozovska, Anna N
• Kwon, Owoong
• Jin, Yeongrok
• Young-Hoon, Kim
• Bae, Hagyoul
• Wang, Chenxi
• Sang-Hyeok Yang
• Belianinov, Alex
• Randolph, Steven
• Eliseev, Eugene A
• Collins, Liam
• Park, Yeehyun
• Sanghyun Jo
• Min-Hyoung Jung
• Kyoung-June Go
• Cho, Hae Won
• Si-Young, Choi
• Jang, Jae Hyuck
• Kim, Sunkook
• Hu Young Jeong
• Lee, Jaekwang
• Ovchinnikova, Olga S
• Heo, Jinseong
• Kalinin, Sergei V
• Young-Min, Kim
• Kim, Yunseok

Titel

Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment

Ist Teil von

• Science (American Association for the Advancement of Science), 2022-05, Vol.376 (6594), p.731-738

Ort / Verlag

Washington: The American Association for the Advancement of Science

Erscheinungsjahr

2022

Quelle

American Association for the Advancement of Science

Beschreibungen/Notizen

• Ion enhanced polarizationHafnium oxide is an exciting material because it has ferroelectric behavior that makes it attractive for various device applications. Kang et al. found that the ferroelectric properties improve by bombarding films of hafnium oxide with a beam of helium ions. The ion bombardment creates oxygen vacancies and strain changes from helium implantation that push more of the polycrystalline samples into the ferroelectric orthorhombic phase. This method may become an important tool for stabilizing the ferroelectric phase for the next generation of electronic devices. —BG