Details

Autor(en) / Beteiligte

• Wei, Huan
• Chen, Ping‐An
• Guo, Jing
• Liu, Yu
• Qiu, Xincan
• Chen, Huajie
• Zeng, Zebing
• Nguyen, Thuc‐Quyen
• Hu, Yuanyuan

Titel

Low‐Cost Nucleophilic Organic Bases as n‐Dopants for Organic Field‐Effect Transistors and Thermoelectric Devices

Ist Teil von

• Advanced functional materials, 2021-07, Vol.31 (30), p.n/a

Ort / Verlag

Hoboken: Wiley Subscription Services, Inc

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Doping is a powerful technique for tuning the electrical properties of organic semiconductors (OSCs). Although numerous studies are performed on OSC doping, thus far only a few n‐type dopants have been developed. Herein, two low‐cost nucleophilic organic bases are reported, namely 1,5,7‐Triazabicyclo [4.4.0] dec‐5‐ene (TBD) and 1,5‐Diazabicyclo [4.3.0] non‐5‐ene (DBN) for n‐doping of OSCs. The two dopants are found to significantly enhance the electrical conductivity of OSCs. In particular, compared to the classic n‐dopant 4‐(2,3‐Dihydro‐1,3‐dimethyl‐1H‐benzimidazol‐2‐yl)‐N, N‐dimethylbenzylamine (N‐DMBI), DBN results in significantly higher conductivity and also lower activation energy in N2200 films, indicating its high doping performance. The utilization of the n‐dopants for improving device performance and controlling the device polarity of organic field‐effect transistors are demonstrated. Furthermore, these dopants are employed for fabricating organic thermoelectric devices, and the power factor value of DBN‐doped N2200 films is found to be about 1.6 times higher than that of N‐DMBI‐doped films. These results show the feasibility of using low‐cost organic bases as efficient n‐dopants and demonstrate their promising applications in organic electronics. Developing efficient n‐dopants for organic semiconductors is an important issue. Here, two low‐cost organic bases are found to have a strong n‐doping effect. Their doping performance is investigated by comparing with the classic n‐dopant N‐DMBI, and their utilization for fabricating high‐performance organic field‐effect transistors and organic thermoelectric devices are demonstrated.