Details

Autor(en) / Beteiligte

• Zhu, Wanlin
• Hayden, John
• He, Fan
• Yang, Jung-In
• Tipsawat, Pannawit
• Hossain, Mohammad D.
• Maria, Jon-Paul
• Trolier-McKinstry, Susan

Titel

Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films

Ist Teil von

• Applied physics letters, 2021-08, Vol.119 (6)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2021

Link zum Volltext

Quelle

美国小型学会期刊集（AIP Scitation平台）

Beschreibungen/Notizen

• This manuscript reports the temperature dependence of ferroelectric switching in Al0.84Sc0.16N, Al0.93B0.07N, and AlN thin films. Polarization reversal is demonstrated in all compositions and is strongly temperature dependent. Between room temperature and 300 °C, the coercive field drops by almost 50% in all samples, while there was very small temperature dependence of the remanent polarization value. Over this same temperature range, the relative permittivity increased between 5% and 10%. Polarization reversal was confirmed by piezoelectric coefficient analysis and chemical etching. Applying intrinsic/homogeneous switching models produces nonphysical fits, while models based on thermal activation suggest that switching is regulated by a distribution of pinning sites or nucleation barriers with an average activation energy near 28 meV.