Details

Autor(en) / Beteiligte

• Kramer, Noah J.
• Voss, Lars F.
• Conway, Adam M.
• Grivickas, Paulius V.
• Bora, Mihail
• Hall, David L.
• Caruso, Anthony N.

Titel

Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry

Ist Teil von

• Physica status solidi. A, Applications and materials science, 2020-10, Vol.217 (20), p.n/a

Ort / Verlag

United States: Wiley

Erscheinungsjahr

2020

Quelle

Wiley Online Library All Journals

Beschreibungen/Notizen

• Optoelectronics This image shows an illustration of the light trapping geometry used to capture low absorbing light used to identify the relative efficiency of different low absorption coefficient photo‐absorption pathways for SiC:V with varying co‐doping, shown for the cases considered in the middle and bottom rows. More details can be found in article number 2000315 by Lars F. Voss and co‐workers.