Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures
Ist Teil von
Applied physics letters, 2019-08, Vol.115 (7)
Ort / Verlag
Melville: American Institute of Physics
Erscheinungsjahr
2019
Quelle
American Institute of Physics (AIP) Journals
Beschreibungen/Notizen
In this study, we experimentally determined the impact ionization coefficients of GaN using homoepitaxially grown p-n diodes with avalanche capability. The extracted hole impact ionization coefficient is obtained as β(E) = 4.39 × 106 exp (−1.8 × 107/E) cm−1, and the electron impact ionization coefficient is obtained as α(E) = 2.11 × 109 exp (−3.689 × 107/E) cm−1. This study also presents the temperature dependence of impact ionization coefficients in GaN. The results presented in this experimental study are an important contribution to the database on the material properties of GaN, which will enable more accurate prediction of the avalanche in GaN devices.