Details

Autor(en) / Beteiligte

• Anders, J.
• Benoit, M.
• Braccini, S.
• Casanova, R.
• Chen, H.
• Chen, K.
• Bello, F.A. Di
• Fehr, A.
• Ferrere, D.
• Forshaw, D.
• Golling, T.
• Gonzalez-Sevilla, S.
• Iacobucci, G.
• Kiehn, M.
• Lanni, F.
• Liu, H.
• Meng, L.
• Merlassino, C.
• Miucci, A.
• Nessi, M.
• Perić, I.
• Rimoldi, M.
• Sultan, D M S
• Pinto, M. Vicente Barreto
• Vilella, E.
• Weber, M.
• Weston, T.
• Wu, W.
• Xu, L.
• Zaffaroni, E.

Titel

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

Ist Teil von

• Journal of instrumentation, 2018-10, Vol.13 (10), p.P10004-P10004

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2018

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.