Details

Autor(en) / Beteiligte

• Anderson, P. Duke
• Fischer, Arthur J.
• Koleske, Daniel D.
• Gunning, Brendan P.
• Subramania, Ganapathi

Titel

III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

Ist Teil von

• Optical materials express, 2018-11, Vol.8 (11), p.3543

Ort / Verlag

Washington: Optical Society of America

Erscheinungsjahr

2018

Quelle

Electronic Journals Library

Beschreibungen/Notizen

• We demonstrate a top-down fabrication strategy for creating a III-nitride hole array photonic crystal (PhC) with embedded quantum wells (QWs). Our photoelectrochemical (PEC) etching technique is highly bandgap selective, permitting the removal of QWs with well-defined indium (In) concentration. Room-temperature micro-photoluminescence (μ-PL) measurements confirm the removal of one multiple quantum well (MQW) while preserving a QW of differing In concentration. Moreover, PhC cavity resonances, wholly unobservable before, are present following PEC etching. Our results indicate an interesting route for creating III-nitride membranes with tailorable emission wavelengths. Our top-down fabrication approach offers exciting opportunities for III-nitride based light emitters.